国家/地区 中国（8）
IPC部 C（8）
IPC大类 C23（8） C01（2） C21（2）
C22（2） H01（2）
IPC小类 C23C（8） C01B（2） C21D（2）
C22F（2）
IPC C23C016/02（8）
发明人 WANG X（8）
公开年 2021（2） 2022（2）
申请年 2022（3）  2016（2）  2021（2） 
专利权人 BEIJING GRAP.（2）

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Method for preparing substrate for growing graphene film, involves annealing metal matrix precursor before or after tungsten plating process or molybdenum plating process, and carrying out annealing treatment in protective atmosphere.

LUO G, WANG G, WANG X, LI J, ZHANG B

Growing graphene on a special-shaped metal substrate comprises ultrasonically cleaning special-shaped metal substrate three times with acetone, ethanol and deionized water, and adding into a melamine aqueous solution and soaking.

ZHANG X, WANG X, CHEN H

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Manufacture of sulfur-doped graphene film for sensor, involves placing metal substrate and thioanthracene in heating zones of reaction chamber, respectively, annealing substrate, heating thioanthracene, and cracking thienanthracene.

CHEN Y, ZHOU J, LIU J, QI F, ZHENG B, HE J, WANG X, LI Q, LI P, ZHANG W

Preparation of graphene material involves plating nickel membrane on substrate, adjusting optical path and parameter of laser, introducing argon gas and hydrogen gas, opening the laser, and introducing methane as reaction precursor source.

FANG F, WANG X, CUI Y, WANG F, LI J, WEI Z, FANG X, LUO T