国家/地区 中国（9）
IPC部 C（9）
IPC大类 C01（9） C04（2） H01（2）
IPC小类 C01B（9）
IPC C01B031/04（9） C04B041/50（2） C04B041/85（2）
发明人 ZHANG C（9）
公开年 2013（9）
申请年 2013（7）  2012（2） 
专利权人 UNIV XIDIAN（5） UNIV TSINGHU.（2）

Preparation of graphene material comprises dispersing additive surface-grafted with graphene sheet, and self-dispersing graphite material into solvent.

KANG F, WEI W, LI B, YANG Q, LV W, ZHANG C

Preparing graphene comprises providing graphite monoxide powder, placing graphite oxide powder into solvent and then heat treating to prepare graphene oxide dispersion liquid, introducing hydrogen sulfide gas of the graphene and reacting.

KANG F, LI B, LV W, TAO Y, WEI W, YANG Q, ZHANG C, ZHENG X

Preparation of expanded graphene by foaming expansion involves adding graphite/polyurethane composite material into muffle furnace, controlling temperature increasing speed, maintaining, and cooling to room temperature in air.

ZHANG C, ZHANG W, DONG W, QIAN Y

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of large-area graphene used for biological, optical and electrical sensor, involves cleaning silicon carbide, heating, carrying out hydrogen etching treatment, mixing argon and carbon tetrachloride, plating and annealing.

GUO H, LEI T, LIU J, ZHANG Y, ZHANG C

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Assembling and synthesizing graphene, comprises introducing transition metal into high temperature section of furnace, allowing substrate material in low temperature region and then vacuumizing and introducing hydrogen gas into furnace.

ZHANG C, MAN B, YANG C