国家/地区 美国（31）
IPC部 B（31）
IPC大类 B82（31） H01（28） C01（27）
C23（10） B32（8） B05（7）
C09（5） G01（5） B29（4）
B01（3） C08（3） G06（3）
G11（3） B41（2） B44（2）
IPC小类 B82Y（31） C01B（27） H01L（24）
H01B（9） B32B（8） B82B（8）
C23C（8） B05D（7） C09D（5）
B29C（4） C23F（4） B01J（3）
G06F（3） G11C（3） H01M（3）
IPC B82Y010/00（31）
发明人 BOL A A（2） FAN S（2） HAQUE S（2）
HAQUE S M（2） HAYASHI K（2） NAGAR R（2）
PARAMBATH V B（2） SUNDARA R（2） TULEVSKI G S（2）
公开年 2012（8） 2014（7） 2013（6） 2010（2） 2011（2） 2022（2）
申请年 2012（10）  2013（7）  2011（4）  2009（2）  2010（2）  2014（2） 
专利权人 SAMSUNG ELEC.（4） NOKIA TECHNO.（3） HON HAI PREC.（2） INDIAN INST .（2）
INT BUSINESS.（2） NAGAR R（2） NOKIA CORP（2） PARAMBATH V .（2）
SUNDARA R（2） UNIV CALIFOR.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
UNIV TSINGHU.（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Method for preparing FET e.g. junction FET, involves providing interdigital electrode on graphene nanoribbon composite structure, where electrode covers set of protrusions and is electrically connected to set of graphene nano-ribbons.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Flexible printed article used in wearable device e.g. conductive contact pad, comprises non-conductive, graphene oxide membrane base substrate, and electronic component positioned on non-conductive, graphene oxide membrane base substrate.

IONESCU R C, HOLDER H A, WITTKOPF J A, WORSLEY R, CASIRAGHI C, SHIELDS J P

Graphene double-barrier resonant tunneling apparatus, has second contact which applies second voltage to fermion sink nanolayer, and transport contact which enables electric current through fermion transport nanolayer.

ASTLEY M R, ASTLEY M

Method for manufacturing transparent conductor in electric devices, involves removing copper support by bringing support into contact with non-acidic copper-etching solution after forming transparent resin layer to expose graphene film.

NAITO K, AKASAKA Y, YANG T, YOSHINAGA N, YANG T Y, AKITA M

Graphene device has insulating layer which is provided between graphene layer and gate electrode, and semiconductor substrate is provided with tunable Schottky barrier formed by junction of source electrode, graphene layer and substrate.

CHUNG H, SEO D, PARK S, BYUN K, SONG H, YANG H, HEO J, CHUNG H J, PARK S J, BYUN K E, SONG H J, YANG H J, HEO J S

Fabrication of graphene nanoribbon array for fabrication of e.g. field-effect transistor device, involves forming graphoepitaxy channel on graphene substrate, and forming layer of surface-modifying copolymer on channel.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, CHOI J W

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Transparent electrode for device comprises graphene sheet on substrate, interlayer consisting of conductive polymer disposed over the graphene sheet, and semiconducting nanowires disposed over the interlayer.

PARK H, CHANG S, KONG J, GRADECAK S, GRADEAOEAK S, ZHANG S

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K