国家/地区 美国（12） 世界知识产权组织（7） 韩国（6） 中国（4） 欧洲专利局（EPO）（4） 日本（2）
IPC部 B（13）
IPC大类 B82（13）
IPC小类 B82Y（13） C23C（13） C01B（9）
H01L（4） B01J（3） B32B（3）
C03C（2） C08K（2） C08L（2）
C30B（2） H01B（2） H01G（2）
IPC B82Y030/00（13）
发明人 CHOI J（2）
公开年 2014（13）
申请年 2013（7）  2012（3）  2014（3） 
专利权人 EMPIRE TECHN.（2） SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

System, useful for encapsulating a substance with graphene to protect the substance from an environment, comprises a first container with graphene oxide and water, a second container with a reducing agent and the substance, and a processor.

MILLLER S A, MILLER S A

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Graphene semiconductor, useful in electrical device e.g. FET, single electron transistor and LED, comprises graphene and a metal atomic layer comprising a metal i.e. sodium disposed on graphene which transfers charge with the graphene.

AHN J, SEO J, PARK J, JEON C, AHN J R, JEON C H, PARK J H, SEO J T

Capacitor cathode foil structure manufacturing method, involves entering carbon precursor into reaction chamber, depositing graphene layer on surface of base foil, and forming graphene layer by graphene thin film.

CHEN M, LIN Q, WANG Y, LIN C, LIN C F, CHEN M T, WANG Y Y