国家/地区 日本（48）
IPC部 C（48）
IPC大类 C01（48） H01（32） B82（24）
C08（11） C09（9） B01（7）
B32（7） C23（4） C04（3）
C25（3） C30（3） H05（3）
B29（2） C07（2） C22（2）
IPC小类 C01B（48） B82Y（24） H01L（15）
H01M（13） H01B（11） B01J（7）
B32B（7） C08K（7） C08L（7）
C08J（6） H01G（6） C09K（5）
B82B（4） C04B（3） C23C（3）
IPC C01B031/04（48）
发明人 CHENG Q（3） BLAIR R（2） CAI J（2）
CHIBA Y（2） CHIBA YOSHIHIRO（2） CHIU G（2）
FASEL R（2） FENG X（2） HENDRIKS J（2）
HENDRIX J（2） HINTERMANN T（2） KAWABATA A（2）
KEAR B（2） LYNCH J（2） MUELLEN K（2）
公开年 2014（48）
申请年 2013（23）  2014（19）  2012（6） 
专利权人 BASF CHINA C.（3） BASF SE（3） DOKURITSU GY.（3） MAX PLANCK G.（3）
NAT INST ADV.（3） SEKISUI CHEM.（3） SEKISUI CHEM.（3） BLAIR R（2）
GARMOR INC（2） JX NIPPON MI.（2） NAKASUGA A（2） NAT INST MAT.（2）
NIPPON MININ.（2） SAMSUNG ELEC.（2） TOSHIBA KK（2） UNIV RUTGERS.（2）

Separating graphene used for e.g. semiconductor device, comprises providing container including graphite particle, graphene and solvent, separating graphite particles from container using magnetic field, and discharging solvent from outlet.

KITAURA H, NISHIKI N, NISHIKAWA K, NAKAYA K, TANAKA A, NAKATANI K, NISHIGI N, TANAGA A

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Synthesis of nano-structured polymers containing graphene involves reacting graphite oxide containing bound oxygen dispersed in solvent by ultrasounds, with vinyl monomer and vinyl aromatic monomer, in presence of strong inorganic acid.

GOFFREDI G, LONGO A, VALENTINO O, FELISARI R, CASALINI A

Synthesis of nanoporous graphene and photo luminescent graphene quantum dots used for e.g. gas separation, involves preparing mixture by dispersing graphene in hydrogen peroxide, filtering mixture, drying residue and dialyzing filtrate.

KURUNGOT S, PALANISELVAM T, PLANISELVAM T, THANGAVELU P

Formation of modified graphene surface used for forming graphene layer for device e.g. nanoelectromechanical systems, involves providing defect-free graphene monolayer, and providing molecules comprising binding group in solvent.

SCHNEIDER G F, DEKKER C, DECKER C

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Manufacture of graphene quantum dots used for road stickers, road signs, coatings, clothing, paints and photographic processing materials, involves exposing carbon source chosen from coal and coke to oxidant.

TOUR J M, YE R, XIANG C, LIN J, PENG Z, HAYASHI K, CERIOTTI G

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y