国家/地区 美国（6） 日本（2） 韩国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8） C23C（8） B01J（2）
B32B（2） C30B（2） H01B（2）
H01L（2）
IPC C23C014/06（8）
发明人 HU C（2） HU C L（2）
公开年 2016（8）
申请年 2015（4）  2014（2）  2016（2） 
专利权人 H HT CO LTD（2） HU C（2） HU C L（2）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Multi-layer graphene article i.e. large-area reinforced multi-layer graphene sheet, for ballistic protection of airplane parts, has graphene layer oriented at twist angle with respect to another graphene layer and bonded by covalent bonds.

DIMITRAKOPOULOS C, MAROUDAS D, MUNIZ A R, GASKILL D K

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Method for producing large-area reduced graphene oxide sheet on substrate, involves subjecting substrate and graphene oxide layer to reduction process simultaneously, and forming reduced graphene oxide layer after reduction process.

HU C L, HU C

Graphene manufacturing method by which high quality and large-area of continuous graphene layer can be directly generated on metal or nonmetal substrate.

HU C, HU C L