国家/地区 中国（6）
IPC部 C（6）
IPC大类 C23（6） C01（2）
IPC小类 C23C（6）
IPC C23C014/06（6）
发明人
公开年 2014（6）
申请年 2014（4）  2013（2） 
专利权人

Method for growing graphene in dielectric material directly, involves cleaning silicon wafer with ethyl alcohol, acetone and deionized water, placing small aromatic molecules in crucible, followed by depositing, annealing and etching.

WANG Q, ZHANG Y, SUN X, ZHUO Q

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Controlling carbon in graphene nanosized crystalline film electron cyclotron resonance involves silicon as substrate, mixing substrate in solvent and then ultrasonically cleaning in acetone and ethanol solutions.

CHEN C, DIAO D, FAN X, GUO M

Preparation of graphene conductive thin film for preparing graphene/silicon multilayer composite anode material involves formulating graphene solution and depositing on metal electrode surface using electron beam vapor deposition machine.

LIN J, WANG W, CHEN M, HOU Z

Preparing transparent conductive film comprises mixing conductive oxide powder, graphene powder and solvent, drying the mixture, then grinding, sintering grinded powder to obtain target material, then sputtering with quartz glass substrate.

ZHANG L, YANG S, CHEN F, SHEN Q, WU J, JIA Y, SALON J, PEREZ J A G, SCHOENUNG J M

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z