国家/地区 中国（5） 韩国（2） 美国（2）
IPC部 C（7）
IPC大类 C23（7） C01（4） H01（3）
IPC小类 C23C（7） C01B（4） H01B（2）
IPC C23C016/56（7）
发明人 ZHANG H（2）
公开年 2014（7）
申请年 2014（4）  2013（3） 
专利权人

Hybrid graphene transparent electrode comprises graphene film coated on metal nanowire transparent electrode.

KIM K H

Precise control of number of graphene layers by transferring graphene multilayer to target substrate, measuring, carrying out ultra-fast laser scanning, and peeling.

YE X, LIN Z, ZHANG H, ZHONG M

Method for growing graphene thin film involves removing metal substrate from high-temperature zone to low-temperature region after closing heating power, rapid cooling, dissolving carbon, freezing, and growing monolayer graphene film.

ZHANG X, DONG G, LIU J

Transfer method of graphene film involves depositing graphene thin film on metal substrate by chemical vapor deposition method, bonding transfer substrate using heat-peelable adhesive, and etching metal substrate.

YANG J, LI H, TAN H, WANG W, QIU Y

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J