国家/地区 美国（6） 中国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC H01L021/02（6）
发明人 AFZALIARDAKANI A（2） MAAROUF A（2） MARTYNA G J（2）
SAENGER K（2）
公开年 2015（6）
申请年 2015（3）  2014（2） 
专利权人 EGYPT NANOTE.（2） INT BUSINESS.（2）

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Method for fabricating reduced-graphene oxide circuit, involves reducing graphene oxide layer into reduced graphene oxide by laser, and forming hydrophilic layer by applying piranha solution to react with surface of substrate.

YUNG K, LIEM H, CHOY H, LIN H, RONG J, CAI H

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V