国家/地区 美国（7） 台湾（3） 世界知识产权组织（3）
IPC部 B（8）
IPC大类 B32（8）
IPC小类 B32B（8）
IPC B32B038/10（8）
发明人
公开年 2015（8）
申请年 2014（3）  2015（3）  2013（2） 
专利权人 INT BUSINESS.（2）

Method for making carbon nanotube composite wire, involves removing substrate to form carbon nanotube/graphene composite film and carbon nanotube/graphene composite film is curled and then twisted.

LIN X, LIU P, ZHANG L, JIANG K, FAN S

Electrochemical etching method used for metal substrate involves forming electrically conductive polymer on graphene layer such that metal plate is coupled to graphene layer, then disposing metal substrate layer in electrolyte.

GUO L, HAN S, LI X

Transferring of graphene to polymeric substrate for device substrate preparation involves heating polymeric substrate to partially melt polymeric substrate, compressing partially melted polymeric substrate against graphene, and cooling.

MACEDO F G J, OZYILMAZ B, CASTRO A H, MARTIN F I

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Forming composite material used in multimodal transport comprises enabling polymer to wick into hollow channels of three-dimensional graphene, curing polymer, adding active material and removing polymer from within hollow channels.

MCKAY I S, YANG S, WANG E N, KIM H

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Manufacture of carbon macrotube used for forming e.g. structural materials used in aerospace components, involves providing at least one layer of graphene, and wrapping at least one layer of graphene around scaffold material.

MCHUGH F J, MALLORY R C

Method of transferring graphene layer provides a method for transferring graphene layer.

LIN W, CHEN T, SU W, WU C, CHANG C, LEE W