国家/地区 中国（8） 日本（6） 韩国（6） 美国（6） 欧洲专利局（EPO）（5） 世界知识产权组织（4） 加拿大（3） 澳大利亚（2） 新加坡（2） 台湾（2）
IPC部 B（11）
IPC大类 B01（11）
IPC小类 B01J（11）
IPC C01B032/194（11）
发明人 BEDWORTH P V（2） HEISE S E（2） SINTON S W（2）
SWETT J L（2）
公开年 2017（2） 2018（2） 2022（2）
申请年 2016（2）  2020（2）  2021（2） 
专利权人 LOCKHEED MAR.（2）

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Preparing nitrogen-doped graphene noble metal composite film, comprises coating mixture made of graphene oxide solution, water-soluble noble metal compound and water-soluble amine cross-linking agent e.g ethylenediamine, drying film, and heating under the protection of inert gas.

CHENG J, LI Y, ZHANG P, AN X

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Preparing molybdenum disulfide/graphene two-dimensional material hetero junction visible light catalyst, comprises e.g. preparing single layer uniform graphene on surface of copper foil, and growing molybdenum disulfide on graphene surface.

CHENG L, ZHENG H, XU W, WANG S

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Preparation of nano-silver loaded graphene composite material includes placing graphene film in reactor, heating, holding, introducing argon, pressurizing, feeding fluorine gas, cooling, depositing silver ion, filling inert gas and standing.

ZHU Y, SHAO R

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y