国家/地区 日本（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/182（5） C23C016/26（5） C30B029/02（5）
C01B032/15（4） C01B032/18（4） C01B032/186（2）
C23C014/14（2） C23C016/01（2） C30B025/18（2）
C30B029/64（2）
发明人 AIDA H（4） AOTA N（4）
公开年 2017（6）
申请年 2016（5） 
专利权人 NAMIKI SEIMI.（4）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Composite comprises single crystal sapphire substrate having film surface with surface roughness below preset value, metal film grown on film formation surface, and graphene film grown on metal film.

AOTA N, AIDA H

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S