国家/地区 美国（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C30B025/18（6） C23C016/26（4） C30B029/02（4）
C01B031/04（3） C23C014/06（3） C23C014/34（3）
C23C016/02（3） H01L021/02（3） C01B032/186（2）
C23C014/18（2） C23C016/01（2） C23C016/34（2）
C23C028/00（2） H01G011/32（2）
发明人
公开年 2016（3） 2017（3）
申请年 2016（7）
专利权人

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Synthesis of Q-carbon, graphene and diamond used as e.g. nanodots, involves depositing amorphous carbon on substrate, melting amorphous carbon into undercooled state and quenching melted amorphous carbon from undercooled state.

NARAYAN J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z