国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C30（8）
IPC小类 C30B（8） C01B（4） B82Y（2）
C23C（2） H01M（2）
IPC C30B029/02（4） C01B032/194（3） B82Y040/00（2）
C30B029/06（2） C30B029/40（2） C30B029/60（2）
H01M004/36（2） H01M004/38（2） H01M004/587（2）
H01M010/052（2） H01M010/0525（2）
发明人 JANG B Z（2）
公开年 2020（8）
申请年 2019（8）
专利权人 GLOBAL GRAPH.（2） NANOTEK INST.（2） UNIV PEKING（2）

Method for producing graphene junction composed of collection of graphene, involves evenly compressing plane above graphene cluster, and generating frictional heat at portion where flat planes of graphene overlap each other.

KOBAYASHI H

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

Producing graphene/metal nanowire hybrid material composition for electrode of lithium battery by preparing a catalyst metal-coated mixture mass and exposing catalyst metal-coated mixture mass to high temperature environment.

JANG B Z

Graphene/silicon nanowire hybrid material powder mass useful in anode for lithium ion battery, comprises silicon nanowires inter-mixed with graphene sheets.

ZHAMU A, SU Y, YIN J, JANG B Z

Growing of graphene single crystals involves growing graphene on substrate by chemical vapor deposition, and introducing oxidizing gas during growth process.

LIU Z, PENG H, CHEN B, SUN L, LI Y, LIU H, WANG Y, CAI A, DING Q, ZHAO Z

Preparation of easy differentiation polycrystalline silicon wafers involves mixing aluminum alloy powder and silicon carbide, spraying with graphene ethanol dispersion, pickling, refining, degassing, machining and bonding with core plates.

WANG X