国家/地区 韩国（25）
IPC部 B（25）
IPC大类 B32（25）
IPC小类 B32B（25）
IPC B82B003/00（21） C01B031/02（19） B82Y030/00（16）
C01B031/04（15） B82Y040/00（13） B82B001/00（11）
B32B009/00（9） B32B037/02（6） B32B038/10（6）
B05D005/00（4） B32B043/00（4） C01B031/00（4）
C01B032/194（4） C23C016/26（4） H01B001/04（4）
发明人 CHOI J（4） AHN J（3） CHOI J Y（3）
KIM H（3） BANDO M（2） CHO S（2）
CHO S H（2） HOBARA D（2） HONG B H（2）
KADONO K（2） KIM H K（2） KIMURA N（2）
KOBAYASHI T（2） LEE J K（2） MILLER S（2）
公开年 2011（10） 2013（5） 2012（4） 2009（2） 2010（2） 2014（2）
申请年 2011（8）  2012（6）  2009（4）  2010（3） 
专利权人 SAMSUNG ELEC.（4） HANWHA TECHW.（3） SAMSUNG TECH.（3） UNIV SUNGKYU.（3）
AHN J（2） EMPIRE TECHN.（2） GRAPHENE SQU.（2） HONG B H（2）
KIM H（2） KOREA INST S.（2） SONY CORP（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Graphene-nanomaterial composite for producing electrode, and electric device, e.g. supercapacitor, fuel cell, and solar cell, comprises graphene stacked structure including graphene films stacked on one another, and nanomaterial.

RYU C, JUNG N, KWON S, CHOI J, RYU C J, JUNG N Y, KWON S G, CHOI J Y

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Graphene structure, useful an electrode material of a touch panel and solar battery, comprises a substrate, a graphene layer, and a contact layer, where the graphene layer is laminated on substrate and formed of graphene doped with dopant.

KIMURA N, KOBAYASHI T, HOBARA D, BANDO M, SHIMIZU K, KADONO K, YASUHARA D, SUMINO K, HOBARA T

Graphene structure, useful as conductive film in e.g. solar cell, comprises conductive layer formed of graphene doped with dopant, and protective layer laminated on conductive layer and made of material having oxidation-reduction potential.

KIMURA N, HOBARA D, KOBAYASHI T, BANDO M, SHIMIZU K, KADONO K, YASUHARA D, SUMINO K

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B

Graphene transferring method involves compressing catalyst metal film and substrate film using initial roller, and separating substrate film from metal film.

NA D, YOON J, SONG Y, WON D, NA D H, YOON J H, SONG Y I, WON D K, YUAN D