国家/地区 韩国（34）
IPC部 B（34）
IPC大类 B82（34） C01（29） H01（15）
B32（10） C23（7） C08（6）
B05（5） C09（4） B01（3）
B29（3） B41（3） B44（3）
C07（3） C03（2） C30（2）
IPC小类 B82B（34）
IPC B82B003/00（30） C01B031/02（25） B82Y030/00（17）
C01B031/04（17） B82Y040/00（16） B82B001/00（12）
H01B001/04（6） C01B031/00（5） H01L029/786（5）
B32B009/00（4） H01L021/20（4） B05D005/12（3）
B32B037/02（3） B32B038/10（3） C01B032/194（3）
发明人 AHN J（2） CHO S（2） CHO S H（2）
CHOE P Y（2） CHOI B（2） CHOI B L（2）
CHOI J（2） CHOI J Y（2） CHUNG H（2）
CHUNG H J（2） HEO J（2） HEO J S（2）
HWANG J（2） HWANG T M（2） I E K（2）
公开年 2011（34）
申请年 2010（16）  2011（11）  2009（7） 
专利权人 SAMSUNG ELEC.（6） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3）
UNIV YONSEI .（3） GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）
HANWHA TECHW.（2） KOREA ADV IN.（2） KOREA ADVANC.（2） KOREA INST S.（2）
SAMSUNG TECH.（2）

Cross-type graphene hetero-junction structure is formed by attaching primary graphene on substrate, coating polymethyl methacrylate to graphene, baking, separating polymethyl methacrylate layer, and aligning layer on secondary graphene.

LEE S W, KIM J S

Manufacturing method of graphene transfer film involves applying air pressure to at least one of graphene growth film and carrier film so that graphene and carrier film are attached to each other.

CHO S, SONG Y, CHO S H, SONG Y I

Method for transferring graphene from graphene forming structure onto desired object e.g. circuit substrate, involves separating oxide layer from metal catalyst layer and removing metal catalyst layer by using etching solution.

CHO S, WON D, CHO S H, WON D K

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Method for forming graphene pattern, involves forming pattern on master board, forming metal layer on imprint stamp, forming graphene on metal layer, transferring graphene on substrate, and forming graphene pattern using imprinting method.

PARK H H, YOO S H, KANG H K, LEE J G, KO C G, JUNG S H, SHIN H B, SONG H Y, JANG M C

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Method for manufacturing of graphene nano-sheet, involves pre-processing graphite in graphite nano-sheet, oxidizing graphite nano-sheet, and removing oxygen functional group from oxidized graphite nano-sheet surface.

SOO J P, LONG Y M

Spinning graphene ribbons into fibers to manufacture graphene ribbon fibers, comprises supplying spin-dope comprising graphene ribbons to spinneret, spinning spin-dope into accrued graphene ribbon fibers, and coagulating accrued fibers.

KOENDERS B M, MEERMAN J J, KAMPERMAN S M, WAARBEEK TER R F, JONG DE J, RADIER A A T, OTTO M J, WAARBEEK T R F, JONG D J, MEERMAN YA Y, JONG D Y, OTTO M YA