国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6） C23（6） B82（3）
B01（2） B05（2） C03（2）
H01（2）
IPC小类 C01B（6）
IPC C23C016/26（6）
发明人 CHUNG H（2） CHUNG H J（2） HEO J（2）
HEO J S（2） HUH J（2） HUH J S（2）
JUNG H（2） JUNG H J（2） KANG S（2）
KANG S R（2） SEO D（2） SEO S（2）
SEO S A（2） WOO Y（2） WOO Y S（2）
公开年 2011（5）
申请年 2010（6）
专利权人 SAMSUNG ELEC.（2）

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Manufacture of graphene film material involves growing graphene film on copper substrate, providing on silicon substrate, dissolving copper substrate in ferric nitrate solution, depositing graphene film, drying, cleaning and cooling.

ZHANG X, JIANG J, YU W, ZHANG L

Preparing single atomic layer graphene film comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, halogenating and generating corresponding by-product.

LIU J, RAO Z, XIA Y

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S