国家/地区 中国（8） 世界知识产权组织（6） 美国（4）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C23C016/26（6） C01B031/04（5） B82Y040/00（3）
C23C014/06（3） C23C016/02（3） B82Y030/00（2）
C01B031/02（2） C01B032/186（2） C23C016/50（2）
C30B029/02（2）
发明人 DING G（9）
公开年 2012（6）
申请年 2012（4）  2011（2） 
专利权人 SHANGHAI INS.（7） CHINESE ACAD.（6） DING G（2） XIE X（2）

Preparing aluminum-metal composite material for vertically growing graphite comprises cleaning base material, growing titanium layer on surface of substrate, washing, growing graphene layer, subjecting to post-powder metallurgy process, processing into uniform workpiece and performing each test.

DING G, TIAN S

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X