国家/地区 美国（6） 韩国（5）
IPC部 C（6）
IPC大类 C01（6） C23（6） H01（6）
IPC小类 C01B（6）
IPC C01B032/186（6）
发明人 LEE C（6）
公开年 2023（3） 2022（2）
申请年 2022（3）  2021（2） 
专利权人 SAMSUNG ELEC.（6）

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J