国家/地区 美国（5） 中国（4） 欧洲专利局（EPO）（4） 世界知识产权组织（4） 韩国（3） 日本（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC C01B032/184（6）
发明人
公开年 2016（6）
申请年 2015（4）  2016（2） 
专利权人

Preparing graphene composite film comprises e.g. dividing graphite powder into two equal portions, adding into first organic and second organic solvent solution, subjecting into sonication, carrying out heating and carbonizing treatment.

LI S

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Producing sheets of graphene, hexagonal boron nitride, molybdenum disulfide, tungsten disulfide or sheets of mixtures of same from powder of materials, involves emplacing powder of multilayered material between two solid substrates.

LOPEZ QUINTELA M A, SHMAVON SHMAVONYAN G, VAZQUEZ VAZQUEZ C, QUINTELA M A, SHMAVONYAN G, VAZQUEZ C, LOPEZ Q M A, SHMAVON S G, VAZQUEZ V C

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

System used to at least partially alter defect area in layer of graphene, on substrate, comprises chamber to receive layer including some graphene and defect areas in graphene, and container to e.g. react substrate to produce cationic area.

MILLER S A, YAGER T A