国家/地区 韩国（18） 美国（9） 世界知识产权组织（8） 中国（3） 欧洲专利局（EPO）（3） 日本（2）
IPC部 B（19）
IPC大类 B41（19）
IPC小类 B41M（19）
IPC C01B031/02（19）
发明人 HONG B H（3） YOON J H（3） CHOI J（2）
CHOI M（2） JUNG M（2） KIM H（2）
KIM S（2） KIM T（2） MOON J（2）
公开年 2014（9） 2015（3） 2011（2） 2013（2）
申请年 2013（8）  2012（3）  2010（2）  2011（2）  2014（2） 
专利权人 HANWHA TECHW.（5） SAMSUNG TECH.（4） GRAPHENE SQU.（3） HANWHA AEROS.（2）
HONG B H（2） LG ELECTRONI.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Preparing inkjet printed graphene ink composition comprises exfoliating graphene with medium, contacting exfoliated graphene medium with aqueous medium to concentrate e.g. graphene and contacting precursor composition with hydrophobic fluid.

HERSAM M C, LIANG Y T, SECOR E B, PRABHUMIRASHI P L, PUNTAMBEKAR K P, GEIER M L, AHN B Y, LEWIS J A

Transferring graphene, comprises e.g. synthesizing graphene layer on catalytic metal film, laminating flexible transfer film on graphene to obtain first laminated structure, and removing catalyst metal film from first laminated structure.

PARK J S

Transfer of graphene used for e.g. solar cell, involves vacuum thermal-processing graphene laminate of support substrate and graphene, and transfer-target substrate to transfer graphene of graphene laminate to transfer-target substrate.

LEE B H, LEE S K, LEE S C

Forming graphene, used in manufacture of electronic device such as e.g. semiconductor device, comprises forming growth mask on metal catalyst layer, and growing graphene on portion of catalyst layer, which is not masked by growth mask.

PARK W I, YI J S

Doping of graphene used for preparing doped graphene, involves forming dopant using graphene flakes, and doping graphene using dopant.

CHOI M, KIM T, MOON J, JUNG M

Producing patterned graphene used in touch panel, comprises etching graphene using an ink pattern, drying the ink pattern, forming the ink pattern including a conductive material or dopant on graphene, and forming graphene on a substrate.

JUNG M, CHOI M, KIM T, MOON J

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Transfer method of graphene for manufacture of e.g. electrode, involves adhering self-adhesive film on graphene provided on material, removing graphene-adhered film from material, transferring to other material and removing film.

HONG B H, KIM S J, PARK M J, JO I S