国家/地区 中国（31）
IPC部 C（31）
IPC大类 C01（31） H01（8） B82（3）
C04（3）
IPC小类 C01B（31）
IPC C01B031/04（30） C04B041/50（3） C04B041/85（3）
B82Y040/00（2） H01L021/205（2） H01L021/324（2）
H01M004/38（2）
发明人 ZHANG Y（31）
公开年 2013（31）
申请年 2013（22）  2012（8） 
专利权人 UNIV XIDIAN（12） CHONGQING IN.（3） CHONGQING MO.（3） INST MICROEL.（2）
SHAXI COAL C.（2） UNIV PEKING（2） UNIV SHANGHA.（2） UNIV SOUTHEA.（2）

Preparation of graphene composite material involves suspending multilayer stack of graphene as graphene sheet in solvent and obtaining graphite suspension, and adding active substance to dispersion of graphene.

CHEN J, WU Y, XIE C, LIN G, LIN J, ZHANG Y, PENG C

Fast controlled coordination assembly and synthesis of large number of layers of high-quality graphene by high speed centrifuging graphite oxide prepared by Hummers method and hydrogen peroxide, and microwave vacuum reducing.

CHEN F, HE Y, WU C, YU X, ZHANG Y, HONG F

Transferable graphene film has graphene layer, release layer and adhering film layer.

DU C, LI C, LI Z, SHAO L, SHI H, ZHANG Y, WEI D

Manufacture of carbon nanotube involves adding graphene quantum dots on silicon wafer, drying, placing in quartz furnace, injecting argon gas to purify chemical vapor deposition furnace, heating, carbon source is added, and cooled.

HU N, LIU Y, YANG Z, ZHANG Y, XU M

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y

Rapidly and non-destructively transferring graphene comprises coating adhesive on the surface of a target substrate, adhering with graphene, performing hot-press treatment or UV-irradiation curing treatment and growth substrate stripping.

DU C, HUANG D, LI C, LI Z, SHI H, TANG L, ZHANG Y

Graphene-metal oxide composite material comprises specified amount of graphene oxide, cerium or zirconium salt, hydrazine and additive.

YANG Y, FU D, ZHANG Y

Preparation of aminated graphene electrode used for battery, involves halogenating graphene oxide in presence of thionyl chloride, forming aminated graphene powder in presence of toluene and ethylene diamine, and pressing powder.

ZHANG Y, LV L, LIU B, WANG C, CHENG Q

Preparing graphene on substrate for transistor, involves grinding catalyst powder with organic adhesive to obtain slurry; coating slurry on substrate, followed by drying, placing in high temperature atmosphere furnace; and annealing.

YANG Y, ZHANG Y, FU D

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y