国家/地区 中国（42）
IPC部 C（42）
IPC大类 C01（42） H01（13） C30（7）
B82（6） C23（3） C08（2）
IPC小类 C01B（42）
IPC C01B031/04（38） H01L021/02（7） B82Y040/00（5）
C30B029/02（5） C01B031/02（4） C23C016/26（3）
B82Y030/00（2） C08K003/04（2） C23C016/02（2）
C23C016/56（2） C30B025/18（2） H01L021/205（2）
H01L021/324（2） H01M004/38（2）
发明人 ZHANG Y（42）
公开年 2012（31） 2013（8） 2014（3）
申请年 2012（42）
专利权人 UNIV XIDIAN（26） ZHANG Y（3） DENG P（2） GUO H（2）
INST PROCESS.（2） LEI T（2） UNIV HEILONG.（2） UNIV PEKING（2）
ZHANG K（2）

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Controlling surface potential of graphene-based material by dispersing graphite powder in solvent, sonicating, adding oxidizing or reducing agent and/or specific functional group-containing chemical reagent, dispersing, and refluxing.

CAO H, LI M, LIU C, ZHANG Y

Modification method of graphene thin film, involves contacting metal ion solution with graphene thin film, drying graphene thin film and metal substrate, and removing organic layer to obtain modified graphene film.

CHEN Z, WANG B, ZHANG H, ZHANG Y, WU Y, YU G, ZHAO Z

Preparation of graphene composite material involves suspending multilayer stack of graphene as graphene sheet in solvent and obtaining graphite suspension, and adding active substance to dispersion of graphene.

CHEN J, WU Y, XIE C, LIN G, LIN J, ZHANG Y, PENG C

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E

Graphene film preparation comprises providing graphene thin film grown on substrate, spin-coating polyvinyl alcohol acetal glue on film surface, and suspending whole thin film in etching solution.

ZHANG Y, GAN Z, FENG Q, WEI Y

Preparing graphene film comprises cutting silicon substrate and then cleaning, putting the cleaned substrate into chemical vapor deposition system reaction chamber, and growing carbon layer on the substrate.

LEI T, GUO H, ZHANG Y, ZHAO Y, ZHANG K, TANG X

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Preparing patterned graphene material comprises removing pollutant on surface of silicon carbide wafer, cleaning surface of silicon carbide, and coating a photoresist layer on the mask surface of the silicon dioxide layer.

TANG X, GUO H, LEI T, ZHAO Y, ZHANG Y, ZHANG K