国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C01B031/02（10） C01B031/04（9） B82Y030/00（6）
B82Y040/00（6） C23C016/26（6） B05D003/02（3）
B05D001/36（2） B32B009/00（2） C01B032/186（2）
C23C014/34（2） C23C016/44（2） H01B005/14（2）
H01B013/00（2） H01L021/20（2）
发明人 CHUNG H（2） CHUNG H J（2） HEO J（2）
HEO J S（2） HUH J（2） HUH J S（2）
JUNG H（2） JUNG H J（2） KANG S（2）
KANG S R（2） SEO D（2） SEO S（2）
SEO S A（2） WOO Y（2） WOO Y S（2）
公开年 2011（10）
申请年 2010（12）
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Manufacture of graphene film material involves growing graphene film on copper substrate, providing on silicon substrate, dissolving copper substrate in ferric nitrate solution, depositing graphene film, drying, cleaning and cooling.

ZHANG X, JIANG J, YU W, ZHANG L

Graphene preparation involves putting substrate in closed cavity cooled by circulating water, where carrier gas is ventilated and substrate is heated.

LIU Y, HUANG L, WANG T, JI L, CHANG Q, GUO G

Making graphene comprises preparing graphene member comprising e.g. base member, oxide layer and metal catalyst layer, applying water to graphene member, separating metal catalyst layer from oxide layer and removing metal catalyst layer.

AHN J, HONG B, LEE Y, SONG Y, SONG Y I, AHN J H, LEE Y B, HONG B H, LI R

Preparing single atomic layer graphene film comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, halogenating and generating corresponding by-product.

LIU J, RAO Z, XIA Y

Carbonaceous nanocomposite used as electrode for battery and field emission display, has graphene sheet on top surface of substrate and carbonaceous nano material having specified aspect ratio provided at other surface of graphene sheet.

JEON M, CHOI H, HWANG S, KIM H, JEON M H, CHOI H K, HWANG S H, KIM H K

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V