国家/地区 中国（7） 美国（6） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 日本（2） 台湾（2）
IPC部 C（8）
IPC大类 C04（8） C23（8） C01（6）
B82（3） C30（3） C03（2）
H01（2）
IPC小类 C04B（8）
IPC C23C016/02（8）
发明人 LIU X（2） SONG Z（2）
公开年 2012（2） 2015（2） 2022（2）
申请年
专利权人 CORNING INC（2）

Graphene sensor composite heat protection structure, comprises substrate layer, graphene sensitive layer, nitride isolation layer, alumina protective layer, and high temperature ceramic protective coating, where substrate layer is provided with a graphene sensitive layer.

LI M, ZHANG H, WANG J

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation of three-dimensional porous ceramic-graphene block composite material involves processing three-dimensional porous ceramic block, permeating salt solution containing metal ion catalyst and graphene, heating, and growing.

WANG S, CHI K, QIU Y, XU X, XU Z

Graphene-coated substrate has graphene layer which is formed in direct contact with surface of dielectric substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X