国家/地区 世界知识产权组织（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C01B031/04（10） B82Y030/00（6） B82Y040/00（5）
C01B032/182（4） C23C016/02（4） C23C016/26（4）
C01B032/186（3） C03C017/22（3） C04B035/52（3）
C04B035/622（3） C04B041/50（3） C04B041/85（3）
C23C016/56（3） B32B015/04（2） B82B003/00（2）
发明人 LIU X（2） SONG Z（2）
公开年 2012（3） 2015（3） 2021（2）
申请年 2012（2）  2013（2）  2014（2） 
专利权人 CORNING INC（2）

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Graphene flake thin film producing apparatus for producing graphene on substrate using graphite powder, has graphite supply unit that is connected to internal space of nozzle unit, and provided to supply graphite powder to internal space.

AHN S, CHU W, CHUN D, LEE C S, NASIM M N E A A, AHN S H, CHU W S, CHUN D M, SUNYONG L C

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Coating surfaces of different substrates with covalently-bonded graphenes comprises thermal expansion and floating of graphene, graphene oxide or graphite materials in the presence of silicon- or cyano-containing polymers.

LEE L J, HUANG W, YU J, LEE L

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F