国家/地区 美国（7） 日本（5） 世界知识产权组织（5） 韩国（4） 中国（3） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/02（8）
发明人
公开年 2012（3）
申请年 2013（3）  2009（2）  2011（2） 
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

New imidazolidine-type compound used for mixed ionic liquid for preparation of graphene dispersion liquid for electronic component e.g. energy storage electrical appliance and lithium-ion secondary battery.

AIDA TAKUZO, PARK CHIYOUNG, RAVI SAISUWAN, MATSUMOTO MICHIO, AIDA T, PARK C, RAVI S, MATSUMOTO M

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Preparing nitrogen doped-graphene involves reacting organic material with amino and functional group e.g. amide group with graphite in reaction medium e.g. polyphosphoric acid and heat treating the prepared organic material-grafted graphene.

JEON I Y, BAEK J H, BAEK J B

Composition useful for fabricating a functionalized carbon-based nanostructure, comprises graphene or graphene oxide comprising at least one functional group associated with the graphene or graphene oxide.

SWAGER T M, COLLINS W R, LEWANDOWSKI W, SCHMOIS E, SYDLIK S, WALISH J, GOODS J B

Organic magnetic material for e.g. electrode of lithium ion battery, contains magnetic graphene formed by subjecting edge portion of graphene to chemical modification to produce magnetic asymmetry between edge portions of graphene.

OOTA N, AWANO H

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P