国家/地区 中国（6）
IPC部 C（7）
IPC大类 C30（7） C23（4） C01（2）
IPC小类 C30B（7）
IPC C30B025/00（7）
发明人
公开年 2022（7）
申请年 2022（5）  2021（2） 
专利权人

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Phased array antenna useful for producing MPCVD single diamond, comprises molybdenum support provided with the driving mechanism for driving the circular plate and the temperature insulation plate provided with the cooling mechanism for cooling outside the reaction preparation tank.

HU F, ZHANG J

Preparing growth graphene of doped germanium single crystal involves using horizontal gradient condensation method to synthesize germanium, cutting polycrystalline germanium, cutting polycrystalline germanium, crucible, quartz tube, quartz cap for cleaning, then processing dry, putting seed crystal.

LI Z

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Synchronous doping method in chemical vapor deposition graphene growth process involves doping trace elements on surface of copper foil, carrying out annealing to form substrate, transferring substrate into furnace, adding reaction gas to enable carbon, gradually depositing and growing on substrate.

ZHANG L, YANG G, ZHENG Y, LUO G, TU R, ZHANGCHI T

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S