国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7） H01（5） C23（3）
B82（2）
IPC小类 C30B（7）
IPC C30B025/04（7）
发明人 FAN S（2） WEI Y（2）
公开年 2021（3） 2013（2）
申请年 2012（2）  2021（2） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Nitride templates based on metal substrates comprises metal substrate, two-dimensional material film, which is located on metal substrate one side, inert material pattern mask layer, nitride epitaxial layer, which is located on inert material pattern mask layer side away from the metal substrate.

ZHANG S, BEN J, JIANG K, LI D, CHEN Y, SUN X

Method for growing gallium nitride single crystal by high temperature heat treatment assisted two-dimensional coating mask substrate, involves adding polyvinylpyrrolidone to adjust viscosity of nanosheet solution, using spin coater to adsorb substrate, growing single crystals on mask substrates.

LV H, WU Y, HAO X, HU H, SHAO Y, ZHANG B

Single crystal diamond epitaxial growth by iridium-graphene structured buffer layer, comprises preparing layer of iridium-nickel composite patterned transition layer performing vacuum stress relief annealing and chemical vapor deposition.

LI C, XIA T, ZHENG Y, YUAN X, CHEN L, LIU J, WEI J

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S