国家/地区 中国（12） 日本（3） 韩国（3） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（15）
IPC大类 C30（15） C01（9） C23（5）
B82（4） H01（2）
IPC小类 C30B（15）
IPC C30B029/02（15）
发明人 CHEN X（2） JIN H（2） LIU S（2）
PENG P（2）
公开年 2011（7） 2012（5） 2013（3）
申请年 2011（15）
专利权人 PENG P（2）

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Manufacture of graphene for transparent electrode of transistor, involves supplying liquid metal in carbon source, contacting graphene seed on surface of liquid metal and growing graphene seed on surface of liquid metal.

WOO Y S, CHOI J Y, ZHIN Z, GUO H, CHOI W M

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bracket for growing graphene, has inner edge and outer edge which are wound more than circle to form structure more than one layer.

JIN H, PENG P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Making high-quality graphene involves processing graphene substrate by reducing defect, placing precursor on substrate by transferring graphene sheet, precipitating/growing graphene with carbon tube and growing precursor into graphene strip.

GUO W, YIN J, ZHOU J

Method for preparing regular graphene single-crystal domain utilized for graphene apparatus, involves forming aromatic compound as regular graphene single-crystal domain on metal surface by molecule self-assembly technology.

CHEN X, LIU L, LIU S, WANG L

Method for preparing single-crystal graphene in electronic device, involves coating hydrocarbon in metal foil, implementing thermal decomposition treatment in foil, and cooling foil to room temperature to obtain graphene sheet metal.

CHEN Y, LI P, LI Y, WANG Z, ZHANG W

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O