国家/地区 中国（4） 美国（4） 世界知识产权组织（4） 韩国（3）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8）
IPC C23C016/52（8）
发明人 ZHANG Y（2）
公开年 2022（2）
申请年 2016（2）  2021（2） 
专利权人 UNIV XIDIAN（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.

KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y