国家/地区 中国（21）
IPC部 C（21）
IPC大类 C30（21）
IPC小类 C30B（21）
IPC C30B025/18（10） C30B029/02（8） C30B029/40（7）
H01L021/02（4） C30B023/02（3） C30B025/16（3）
C30B029/16（3） C30B029/20（3） C01B032/186（2）
C23C014/18（2） C23C014/35（2） C30B001/10（2）
C30B025/20（2） C30B029/38（2） C30B029/62（2）
发明人 CHEN Y（2） LI Y（2） WANG G（2）
WANG X（2） YANG J（2） ZHANG J（2）
ZHANG L（2） ZHANG S（2）
公开年 2023（21）
申请年 2022（13）  2021（4）  2023（4） 
专利权人 UNIV PEKING（2）

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparation of folding-resistant high-peeling aluminum-coated fabric involves coating coupling agent on etched surface of aluminum foil, coating conductive adhesive on coupling agent layer, pressing fabric on adhesive layer, and sewing.

CHEN Y, YE W, SUN Q, LONG X

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Manufacture of ultra-low absorption sapphire involves doping substance that reduces absorption coefficient of sapphire into aluminum oxide to form mixture, placing mixture into crucible, vacuumizing and heating, necking and seeding, shouldering, performing isometric growth, cooling and annealing.

ZHANG Y, WANG Y, HUANG C, CHEN J, GAO C, ZHAO P, ZHOU N, CHENG G

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X