国家/地区 世界知识产权组织（30）
IPC部 C（30）
IPC大类 C01（30） B82（19） H01（14）
B32（8） C07（6） C23（6）
G01（4） B01（3） C08（3）
C09（3） C25（3） G02（3）
B05（2） C12（2） C30（2）
IPC小类 C01B（30）
IPC C01B031/04（26） C01B031/02（18） B82Y030/00（17）
B82Y040/00（15） H01B001/04（9） C01B031/00（6）
C01B032/182（5） B82B001/00（4） C23C016/26（4）
B01J021/18（3） B32B009/00（3） B82B003/00（3）
B82Y020/00（3） C01B032/19（3） C01B032/194（3）
发明人 QU Y（6） SUN Z（2） TOUR J M（2）
YAN Z（2）
公开年 2011（30）
申请年 2011（30）
专利权人 WUXI DILIUYU.（6） WUXI SIXTH E.（6） UNIV MANCHES.（2） UNIV PENNSYL.（2）
UNIV RICE WI.（2） UNIV SINGAPO.（2） UNIV SINGAPO.（2） UNIV TEXAS S.（2）

Method for guiding optical signal on layers of graphene to create optical device e.g. ribbon waveguide beam combiner or splitter, involves arranging portion of layer of graphene to provide conductivity.

ENGHETA N, VAKIL A

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

Forming graphene thin films/functionalized graphene coatings, comprises providing conducting substrate and electrophoretically forming graphene or functionalized graphene using solution comprising e.g. exfoliated graphene sheets.

BANERJEE S, WHITTAKER L, LEE V, WHITAKER L

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Non-transition metal catalyst, useful in oxidation, hydration, dehydrogenation, condensation, polymerization or auto-tandem oxidation-hydration-condensation reactions, comprises catalytically-active graphene oxide or graphite oxide.

BIELAWSKI C W, DREYER D R, JIA H, BIELAWSKI C, DREYER D

Preparation of graphene with solid carbon source, involves spraying organic polymer on metal substrate, heating substrate, spraying solid carbon source, filling protection gas, heating, and maintaining highest temperature and air flow.

QU Y

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y