国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8） C23（2）
IPC小类 C01B（8）
IPC C01B031/04（8） C01B032/184（3）
发明人 JIANG H（8）
公开年 2016（8）
申请年 2016（5）  2015（3） 
专利权人 CHINESE ACAD.（6）

Carrier for controlling growth of graphene nuclei, has box enclosing wall around contour, where upper edge of cover is fitted with box around peripheral wall of fitting.

GAO X, JIANG H, LI Z, SHI H

Reduction of graphene oxide comprises mixing N,N-dimethylbenzylamine and hydrazine hydrate, placing graphene oxide thin layer and prepared mixture in reflux device and reacting in oil bath.

CHEN J, WANG T, WANG C, JIANG H, QU G

Preparing uniform graphene thin film by introducing metal substrate into chemical vapor deposition reaction chamber, heating chamber, annealing metal substrate and carrying out graphene nucleation on metal substrate surface.

GAO X, JIANG H, LI Z, SHI H, YANG G

Preparing substrate of multiple graphene films involve subjecting metal substrate to high temperature annealing, cooling metal substrate to room temperature, coating layer of carbon solution on metal substrate, and solidifying solution.

GAO X, JIANG H, LI Z, SHI H

Graphene multilayer stacking transfer method involves taking transfer target substrate, coating with elastic transparent coating, forming target substrate/elastic transparent coating, and carrying out rolling method.

GAO X, JIANG H, LI C, LI Z, MA J, SHI H, XU X

Graphene transfer device comprises feeding unit, pressing unit, power bubbling prevention unit, water flushing unit, drying unit and winding unit, where pressing unit is provided with driving pressing roller.

GAO X, JIANG H, LI C, LI Z, MA J, SHI H, XU X

Graphene crystal growth controlling carrier comprises high-temperature carrier with cover with hole, boxes with opening, flat bottom wall and chemical vapor deposition tube furnace quartz tube, and flat metal substrate for growing graphene.

GAO X, JIANG H, LI Z, SHI H

Preparation of nitrogen-doped three-dimensional graphene useful in sensor, involves adding nitrogen-containing organic polymer to transition metal nitrate, milling mixture and carbonizing, placing mire in acidic solution, and drying.

JIANG H, PENG S, ZHANG Y, DENG W, TAN Y