国家/地区 德国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（4） H01L021/02（3） B82Y030/00（2）
B82Y040/00（2） C01B032/194（2） H01L021/324（2）
H01L021/768（2） H01L029/16（2）
发明人 RUHL G（2） RUHR G（2）
公开年 2016（6）
申请年 2015（3）  2014（2） 
专利权人 INFINEON TEC.（2）

Composite material used as anode material, comprises intimate mixture consisting of lithiated or partially lithiated graphite or graphene, powdered silicon having particle size of preset range and optionally metallic lithium.

WIETELMANN U, EMMEL U, KRAEMER G, KURTH C, SCHERER S, BUHRMESTER T, KRAMER G

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Metallic bipolar plate useful in electrochemical cell e.g. low- and high temperature polymer electrolyte fuel cells/electrolyzers, comprises electrically conductive graphene-like coating.

WEISSBECKER V, LEHNERT W, REIMER U, WEI SZLIG BECKER V, REINERT W

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H