国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8） C23（2）
IPC小类 C01B（8）
IPC C01B032/186（8）
发明人 CHENG H（8）
公开年 2018（2） 2020（2） 2022（2）
申请年 2019（2）  2021（2） 
专利权人 INST METAL R.（7）

Preparing a high-performance thermal interface material by using mold to squeeze three-dimensional porous metal, heating, performing catalytic growth of graphene on the surface of a porous metal substrate and using vacuum impregnation process to fill polymer substrate in the porous graphene pores.

CHENG H, LIU H, MA C, REN W

Method for preparing graphene film, involves obtaining three-dimensional connected graphene framework structure with high density, obtaining three-dimensional graphene porous, and pressing obtained three-dimensional graphene porous to form graphene film.

CHENG H, LIU H, MA C, REN W

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Fast chemical vapor deposition growth of single-layer graphene on non-metallic substrates comprises e.g. raising non-metallic substrate to growth temperature in non-oxidizing atmosphere, and charging reaction system with carbon source.

MA L, WEI S, REN W, CHENG H

Preparation of graphene powder used as filler, involves adding metal salt to cavity, introducing mixed atmosphere of e.g. carbon source gas into cavity, subjecting to reduction reaction and growing graphene on reduced metal salt substrate.

REN W, MA C, CHENG H

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Preparing graphene composite structural material comprises e.g. using methane as growing gas, argon as shielding gas, hydrogen as reducing gas, nickel metal foil as catalyst and then annealing graphene film.

QU L, CHENG H, ZHANG P

Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.

CHENG H, MA L, REN W