国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C30B029/02（5） C01B031/04（4） C01B031/02（3）
C23C016/26（2） C30B025/18（2）
发明人 GUO H（7）
公开年 2012（6）
申请年 2012（6） 
专利权人 UNIV XIDIAN（7）

Manufacture of nickel film-containing graphene nano ribbon involves forming carbon-silicon carbide epitaxial film on carbonized layer formed on silicon substrate, depositing nickel film, annealing and removing nickel film.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon used in manufacture of microelectronic device, involves preparing masking plate by isolation strip and ion-implantation strip, and controlling width of strips, and injecting carbon ions to substrate.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon by growing carbide layer on silicon substrate chip, growing cubic silicon carbide heteroepitaxial film, injecting carbon ions, pyrolyzing to generate carbon film, placing on copper film, and annealing.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y