国家/地区 欧洲专利局（EPO）（7）
IPC部 B（7）
IPC大类 C01（7） H01（7） B82（6）
C23（4） C30（3） B32（2）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人
公开年 2013（7）
申请年 2013（4）  2011（2） 
专利权人

Depositing graphene onto a substrate used in polymeric composites, involves transferring solubilized graphene onto the substrate in a liquid medium, where transferring occurs by changing the solubility of graphene in the liquid medium.

PAWLOSKI A R, BENNETT G S, CERNOHOUS J J, KASKE K, SZYMANSKI A E

Manufacturing laminated structure used in e.g. display, comprises bonding layer of graphene film on first substrate to second substrate with adhesive resin layer, removing first substrate and forming transparent layer on graphene film.

KIMURA N, SHIMIZU K, FUKUDA T

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A