国家/地区 韩国（33）
IPC部 C（33）
IPC大类 C23（33）
IPC小类 C23C（31） C01B（26） H01L（8）
B05D（7） B32B（5） B01J（4）
C23F（4） B05B（3） B82Y（3）
G01N（3） H01B（3） B65H（2）
B82B（2） C25D（2） C30B（2）
IPC C01B031/04（24） C23C016/26（23） B05D001/00（6）
C01B032/186（6） C23C016/01（5） H01L029/16（5）
C01B031/02（4） C01B032/194（4） C23C014/34（4）
C23C016/455（4） B05B001/30（3） B32B009/00（3）
B82Y040/00（3） C01B032/182（3） C01B032/184（3）
发明人 LEE Y T（9） KIM H（2） KIM W S（2）
PARK S（2）
公开年 2016（33）
申请年 2015（15）  2016（15）  2014（3） 
专利权人 LEE Y T（9） SAMSUNG ELEC.（2） SNU R DB FO.（2） UNIST ULSAN .（2）
UNIV SEOUL N.（2） UNIV SUNGKYU.（2）

Producing metal-graphene thermally conductive film, comprises forming a graphene film, and forming a composite film.

ZHANG X

N-doping of graphene for N-doped graphene oxide/graphene bilayered structure, involves forming graphene oxide by oxygen-plasma treatment of graphene, transferring graphene oxide to another graphene and doping with functional group.

CHO H J, SEO Y M, WHANG D

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Packing apparatus for protecting graphene, comprises synthesizing chamber for defining space for synthesizing graphene on metallic foil, and first and second roll chamber formed respectively on both sides of synthesizing chamber.

CHO S W, KIM K S, KIM Y J, LEE I B

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Chemically etching graphene-catalyzed silicon, comprises e.g. laminating graphene layer on the silicon layer, forming nano-templates on laminated graphene layer and forming graphene nanostructure with pattern mask.

SUK H C, JUNG K K, CHOI S H, KIM J K

Composition used for coating aluminum component, comprises graphene oxide, dispersant, surfactant, and solvent chosen from methyl ethyl ketone, tetrahydrofuran, ethylene glycol, dimethylformamide and N-methyl-2-pyrrolidone.

LEE S W, KIM W S

Manufacture of corrosion-resistant metal base material involves coating carbonaceous liquid on substrate, heating, forming layer having graphene layers, and forming corrosion-resistant base of preset corrosion inhibition efficiency.

HUH J H, KIM J H, KIM S H, KWON S Y

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H