国家/地区 韩国（78）
IPC部 C（78）
IPC大类 C01（78）
IPC小类 C01B（78）
IPC C01B032/184（78）
发明人 JANG B Z（5） PARK S（5） ZHAMU A（5）
LEE K S（4） KIM H（3） KIM H K（3）
KIM I（3） KWON W J（3） LEE H（3）
LEE J（3） LIM J（3） SOHN K（3）
SOHN K N（3） YANG S（3） ABDELKADER A M（2）
公开年 2015（12） 2017（9） 2021（9） 2016（8） 2022（8） 2013（7） 2018（7） 2014（5） 2020（3） 2023（3） 2011（2） 2012（2） 2019（2）
申请年 2016（13）  2021（9）  2014（8）  2015（8）  2020（8）  2013（7）  2017（5）  2011（4）  2012（4）  2018（4）  2022（4）  2010（2）  2019（2） 
专利权人 NANOTEK INST.（5） JANG B Z（3） KOREA INST E.（3） LG CHEM LTD（3）
SAMSUNG ELEC.（3） ZHAMU A（3） ELECTRONICS .（2） GRAPHENEALL .（2）
HANWHA AEROS.（2） HANWHA CHEM .（2） HANWHA TECHW.（2） KOREA INST S.（2）
LG CHEM CO L.（2） SAMSUNG TECH.（2） UNIV GACHON .（2） UNIV GRIFFIT.（2）
UNIV MANCHES.（2） UNIV RICE WI.（2） UNIV RICE WI.（2） UNIV SUNGKYU.（2）

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Reduced graphene oxide used in electrode for secondary battery, comprises crystalline reduced graphene oxide in powder form having two-dimensional structure.

JEONG S Y, YANG S H, LEE G W, KIM I J, KIM B G, RYU J H, LEE H J, JEONG S, YANG S, LEE G, KIM I, KIM B, RYUJIHYUN, LEE H, JUNG S Y

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D

Manufacture of reduced graphene oxide during manufacture of conductive thin film, involves pre-treating expandable graphite by dispersing in dispersion solvent, pulverizing, and heat-treating, acid-treating pre-treated expandable graphite to obtain graphene oxide, and reducing graphene oxide.

TAE O, PARK S Y, CHEY G Y, OH W

Structurally regularity mesoporous carbon structure useful e.g. as electrocatalyst support and energy storage medium, comprises graphene skeleton connected three-dimensionally in a structurally regular manner, including graphene tube.

HOON J, BAEK D S

Hybrid complex useful for preparing electrode active material for lithium-ion battery comprises graphite core particles, graphene nanosheets on surface of graphite core particles, and two-dimensional heterogeneous laminate structure.

YUN H N, PARK S, SONG K S, CHUN Y K, HYUN R M, YANG J, YOO J J, JANG G Y, LEEYOUNGA

Preparing hybrid composite useful for preparing anode active material for lithium-ion battery mixing alkali ion precursor solution into bulk material powder, injecting water, heat-treating the mixture, and removing surfactant.

YUN H N, PARK S, YOO J J, JUNG K, HYUN R M, YANG J, LEEYOUNGA, JANG G Y, SHIN H, KIM J

Graphene film used for forming electrochemical device, comprises graphene structure comprising regions comprising graphene structure arranged in plane direction and direction perpendicular to plane direction.

LEE S S, JUNG H K, AN K, LIM J, MYUNG S, SONG W, JI S G, SONG D S, PARK S, YOON Y, SEOG S, YOON Y H, GI S G