国家/地区 中国（8）
IPC部 C（8）
IPC大类 C23（8） H01（8） C01（5）
B82（3） B32（2） C30（2）
H05（2）
IPC小类 C23C（8） H01L（7） C01B（5）
B82Y（3） B32B（2） C30B（2）
IPC C23C016/26（8）
发明人 CHAI Z（2） HAN D（2） HAO Y（2）
NING J（2） WANG D（2） YAN Y（2）
ZHANG J（2）
公开年 2012（4） 2013（3）
申请年 2012（8）
专利权人 UNIV XIDIAN（3）

Preparing graphene-silicon composite material used in lithium ion battery, involves heating substrate in vacuum reaction chamber in protective gas and vacuum condition.

WANG Y, ZHONG H, ZHOU M

Conductive material useful in an electric device, comprises a carbon substance comprising a graphene (a single-layered graphene or a multilayered graphene), and a metallic substance mixed with and/or laminated to the carbon substance.

NAITO K, YOSHINAGA N, NAKANO Y, AKASAKA Y, MATAKE S, AKITA M, MATEKE S

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y