国家/地区 美国（6） 韩国（4） 中国（3） 欧洲专利局（EPO）（3） 日本（2）
IPC部 C（6）
IPC大类 C01（6） H01（6） C23（3）
IPC小类 C01B（6）
IPC C23C016/26（3） C01B021/064（2） C01B025/00（2）
C01B032/182（2） C01B032/186（2） C23C016/50（2）
H01L021/285（2） H01L021/768（2） H01L023/532（2）
发明人 LEE C（6）
公开年 2022（3） 2023（2）
申请年 2021（6）
专利权人 SAMSUNG ELEC.（4）

Process of producing cathode electrocatalyst for metal-air batteries, involves providing carbon source suspension that includes an inorganic carbon source, metal source solution including a metal source, and nitrogen source solution including a nitrogen source.

LEE C, PAN C, KUO Y, LEE C I, PAN C J, GUO Y S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Porous carbon material of core-shell structure used in sulfur-carbon composite used in lithium secondary battery, comprises core comprising stack structure of carbon sheets and carbon-containing shell surrounding core.

JEONG Y, SOHN K, LEE C, JUNG Y C, LI C, SUN Q

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X