国家/地区 韩国（22） 美国（19） 世界知识产权组织（11） 中国（10） 日本（9） 欧洲专利局（EPO）（7） 印度（5） 墨西哥（5） 俄罗斯（5） 台湾（5） 巴西（2）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC C01B031/02（24）
发明人 HONG B H（5） VEERASAMY V（4） VEERASAMY V S（4）
AHN J（3） BAE S K（3） KIM H K（3）
KIM K S（3） AHN J H（2） BAE S（2）
CHOI J（2） CHOI J Y（2） CHUNG H（2）
CHUNG H J（2） GANG B S（2） GEUN K H（2）
公开年 2011（24）
申请年 2010（12）  2011（7）  2009（5） 
专利权人 UNIV SUNGKYU.（7） SAMSUNG ELEC.（6） GUARDIAN GLA.（4） GUARDIAN IND（4）
GUARDIAN IND.（4） UNIV SUNGKYU.（4） GRAPHENE SQU.（3） SAMSUNG TECH.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） VEERASAMY V .（2）

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J