国家/地区 台湾（7）
IPC部 C（7）
IPC大类 C01（7） H01（7） C23（3）
IPC小类 C01B（7）
IPC C01B032/194（3） C23C016/26（3） H01M004/62（3）
C01B032/182（2） C01B032/186（2） C01B032/21（2）
C23C016/04（2） C23C016/34（2） C23C016/56（2）
H01L021/02（2） H01L021/768（2） H01M004/02（2）
H01M004/131（2） H01M004/139（2） H01M004/505（2）
发明人
公开年 2021（7）
申请年 2021（7）
专利权人

Coated cathode active material used for slurry for cathode for secondary battery, comprises cathode active material and coating layer comprising coated cathode active material which is derived from phosphorus-containing compound.

HO K P, JIANG Y, DU F, HUEN P, XUAN S, HE J, DUFENGJUAN, HUENPRISCILLA

Preparing high-flexibility graphite material or graphene material radiating component, comprises plasma cleaning graphite, mixing components of activating agent, preparing activating catalyst, washing and drying raw product electroplated with copper layer.

PANG M, PANG M X, MACING F

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Carbon material useful in conductive composition for forming conductive film and used in electricity storage device, comprises carbon hexagonal network surface as basic framework, where boron element is doped to replace carbon element.

YASUYUKI M, HIROTO W, YUKA M, MOROISHI Y, WATANABE H, MIYAFUSA Y, MIYAFUSAYUKA

Electrode mixture used in electrode mixture layer of electrode used in secondary battery, comprises lithium-containing transition metal oxide, auxiliary conductive agent, binder and organic solvent, where auxiliary conductive agent contains nanocarbon material e.g. multiwalled carbon nanotubes.

FUKUSHIMA K, ICHINOSE Y, SHINODA C, YAMAZAKI S, GANTA F, TACHIHIRO S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K