国家/地区 中国（69）
IPC部 H（69）
IPC大类 H01（54） C01（11） H04（9）
C08（8） H05（8） B82（5）
C23（3） B32（2） C04（2）
D01（2） G06（2） H10（2）
IPC小类 H01M（40） C01B（11） C08L（8）
H04R（8） C08J（7） H05K（7）
C08K（6） H01L（6） B82Y（5）
H01G（4） C23C（3） H01B（3）
B32B（2） C01G（2） C04B（2）
IPC H01M004/36（24） H01M004/62（22） H01M010/0525（19）
H01M004/38（10） H01M004/525（8） H01M004/58（8）
H01M010/052（8） H01M004/583（6） H01M004/587（6）
B82Y030/00（5） H01M004/13（5） H01M004/48（5）
H01M004/485（5） H05K009/00（5） B82Y040/00（4）
发明人 LI C（69）
公开年 2022（46） 2023（23）
申请年 2022（69）
专利权人 GUANGDONG BR.（12） HUNAN BRUNP .（12） GOERTEK INC（8） HUNAN BRUNP .（5）
SAMSUNG ELEC.（5） JINGMEN GEM .（4） GEM CO LTD（3） LG ENERGY SO.（3）
UNIV NORTHWE.（2） ZHEJIANG XIN.（2）

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Method for eliminating scattering of edge parallel polarization electromagnetic wave in e.g. aerospace, involves filling space between adjacent units with wave absorbing material, and reflecting and absorbing electromagnetic waves incident on object multiple times between adjacent units.

MA J, LI C, HAN W, XU X, JIANG T, JIANG X

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Preparation of repairing carbon-coated silicon-based material used in e.g. negative electrode, involves mixing carbon source precursor and silicon-based raw powder, heat-treating to obtain composite material, mixing with repairing agent in solvent, and heat-preserving.

LV F, QIANG G, QIN J, REN C, LI C, LIN X, DONG H, FU Q, SUN J, GONG J, MENG X

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Preparing multi-component doped graphene sodium ion cathode material comprises mixing copper nitrate, silver nitrate and graphene oxide, adding aqueous ammonia dropwise to prepare mixed solution containing copper ammonia and silver ammonia, adding glucose solution, and heating.

LI C, ZHANG X, YU H, LI A, XIE Y

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Metal-doped silicon oxide composite material used in battery, comprises silicon oxide, metal element, and graphene layer and carbon layer coated on outer side of silicon oxide.

FANG M, GENG M, LI C, PENG S, CHEN B, ZHANG L, TAN Y

Wave-absorbing structural composite material used for wave-absorbing coatings and wave-absorbing patches, has electric loss absorbing layer including multilayer structural layer and multilayer electrical impedance matching layer.

LI Z, LI C, YU W, TIAN J, YANG Z, SUN X, JIANG Y, YI S, ZHANG J, YU H

Preparing ternary precursor coated by conductive material comprises pre-processing conductive material with surfactant, mixing with ternary precursor in liquid phase, and drying to obtain finished product, where surfactant comprises polyethylene wax.

YUAN W, XU K, HUA W, LI C, YUE X, ZHANG K