国家/地区 美国（31）
IPC部 B（31）
IPC大类 B32（31）
IPC小类 B32B（31）
IPC C01B032/186（31）
发明人 HONG B H（4） CHOI J（3） CHOI K（2）
DATSKOS P G（2） HEE H B（2） HEIGHT M（2）
IVANOV I N（2） JOHNSON B Y（2） MAZUMDER P（2）
PARK H（2） PARK H G（2） VLASSIOUK I V（2）
公开年 2013（6） 2015（5） 2016（5） 2017（4） 2012（3） 2014（2） 2021（2）
申请年 2015（6）  2012（5）  2013（4）  2014（4）  2016（4）  2011（2）  2020（2）  2022（2） 
专利权人 SAMSUNG TECH.（3） CORNING INC（2） GRAPHENE SQU.（2） HANWHA AEROS.（2）
HANWHA TECHW.（2） HEIQ MATERIA.（2） HONG B H（2） INT BUSINESS.（2）
SAMSUNG ELEC.（2） UNIV SUNGKYU.（2） UTBATTELLE L.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Making article involves orienting first graphene layer at first interlayer twist angle with respect to second graphene layer, bonding, orienting third graphene layer at second interlayer twist angle and bonding third layer to second layer.

DIMITRAKOPOULOS C, MAROUDAS D, MUNIZ A R, GASKILL D K

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H