国家/地区 美国（61）
IPC部 B（61）
IPC大类 B32（61）
IPC小类 B32B（61）
IPC B82Y030/00（43） C01B031/02（41） C01B031/04（35）
B82Y040/00（34） B32B009/00（19） C23C016/26（18）
H01B001/04（17） B32B009/04（15） B32B038/10（11）
B82B003/00（9） B32B037/02（6） B82Y099/00（6）
C01B031/00（6） C01B032/182（6） H01B005/14（6）
发明人 CHOI J（9） CHOI J Y（4） SHIN H J（4）
CHIBA G（3） CHIBA Y（3） KIM H（3）
KIMURA N（3） KOBAYASHI T（3） LI Y（3）
SHIMIZU K（3） SHIN H（3） WANG M（3）
YOON S（3） YOSHIHIRO C（3） BANDO M（2）
公开年 2013（28） 2012（24） 2014（9）
申请年 2012（61）
专利权人 SAMSUNG ELEC.（7） UNIV SUNGKYU.（4） CHOI J（3） HANWHA TECHW.（3）
INT BUSINESS.（3） JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3）
SAMSUNG TECH.（3） SONY CORP（3） UNIV SUNGKYU.（3） WANG M（3）
HON HAI PREC.（2） HONG B H（2） HONGFUJIN PR.（2） JANG B Z（2）
KANG J（2） KIM H（2） KOREA INST S.（2） NANOTEK INST.（2）

Unitary graphene matrix composite for e.g. tablets comprises matrix of closely packed/chemically bonded graphene planes, and is made by heat-treating graphene oxide gel; and carbon or graphite filler phase of components such as carbon black.

ZHAMU A, WANG M, XIONG W, JANG B Z

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Graphene-based composite structure, useful as topological insulator in thin film transistor, comprises graphene layer, transition metal layer and substrate, where graphene layer and transition layer are coupled by orbitals hybridization.

DUAN W, LI Y, CHEN P, WU J, GU B

Electrochemical etching method for removing metal substrate layer from graphene layer, involves connecting graphene layer or metal substrate layer to power source to supply current to etch metal substrate layer from graphene layer.

HAN S, GUO L, LI X

Apparatus for electrochemical or electroplating etching of copper foils from graphene for e.g. electronic device application, has anode including metal substrate layer etched from graphene layer in response to current flowing through anode.

HAN S, GUO L, LI X

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of electromagnetic-wave-absorption film for e.g. personal computer, involves coating organic-solvent dispersion liquid comprising graphene microparticles and binder resin on surface of plastic film, and drying coated film.

KAGAWA S, SEIJI K

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Transferring graphene film involves disposing patterned protection layer on second surface of carrier, patterning carrier, disposing patterned carrier with first graphene film on target substrate, and removing patterned carrier.

TZENG Y, CHEN W

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A