国家/地区 中国（4）
IPC部 B（6） C（6） H（3）
IPC大类 C01（6）
IPC小类 C01B（6） B82Y（5） H01L（2）
IPC C01B021/064（6）
发明人
公开年 2016（3） 2014（2）
申请年 2014（6）
专利权人

Graphene double-barrier resonant tunneling apparatus, has second contact which applies second voltage to fermion sink nanolayer, and transport contact which enables electric current through fermion transport nanolayer.

ASTLEY M R, ASTLEY M

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Preparing graphene-based boron nitride nanosheets, comprises e.g. carrying out liquid phase stripping of boron nitride powder and organic solvent, and separating un-striped boron nitride powder aqueous solution or organic solvent suspension.

LI P, ZHANG Y, ZHENG S

Preparing graphene two-dimensional nano-sheet comprises adding stripped layered material into anhydrous solvent, stirring, adding alkali metal into dispersion, dispersing, washing the crude product, treating ultrasonically and washing.

FENG H, HU Z, LIU X

Preparing inorganic composite film by mixing graphene and inorganic nano-particle with solvent, then ultrasonic dispersion and extruding graphene/inorganic nanoparticles mixed dispersion and solidifying shaped die with coagulation liquid.

GAO C, LIU Z, PENG L, XIA Z

Preparing boron nitride nano-sheets, comprises e.g. uniformly mixing ammonium sulfate, sodium borohydride and graphene nanosheets, and heating, cooling, washing with hydrochloric acid, filtering, and subjecting to oxidation treatment.

BAI Y, BI J, CHEN Y, YIN C, YOU G, ZHAO Q, BI Z, PEI B