国家/地区 中国（11）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/188（11）
发明人 VEERASAMY V（2） VEERASAMY V S（2） ZHANG X（2）
公开年 2017（3） 2011（2） 2015（2）
申请年 2017（4）  2009（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Preparing in-situ heteroepitaxial graphene-coated silicon material useful in lithium-ion battery, comprises e.g. removing magnetic impurities in silicon raw material, drying, sand milling, reacting with fluorocarbon radicals, spray drying, low heating and carrying in-situ heterogeneous epitaxy.

ZHOU S, SHEN J, CHEN M, LUO X, HOU Q, ZHANG X

Heteromorphic porous graphene useful in supercapacitor electrode material, conductive filler material, biosensing material, sewage treatment comprises structural units formed by graphene nanosheets, linearly distributed vermicular nanopores.

YAN X, SU L

Controllable step-shape pre-treatment of silicon carbide substrate useful in pyroletic preparation of graphene, comprises placing the cleaned silicon carbide substrate on a susceptor in a chemical vapor deposition CVD apparatus, and heating.

ZHAO Z, LI Y, WANG Y, LI Z

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Growing patterned graphene on electrode surface by placing substrate with electrode in carbon source, irradiating surface of electrode with laser light and growing graphene film layer on electrode surface at irradiation site.

CHEN G, GUO T, CHEN H, HU H, YE Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V