国家/地区 韩国（95） 美国（28） 世界知识产权组织（28） 日本（14） 欧洲专利局（EPO）（6） 台湾（5） 中国（4） 加拿大（2） 法国（2）
IPC部 B（117）
IPC大类 B01（117）
IPC小类 B01J（117）
IPC C01B031/02（117）
发明人 SEO B（7） MOON J（5） JUNG M（4）
KIM K H（4） PARK W（4） RHO J（4）
BYUN N（3） HUR S H（3） JEONG H M（3）
KIM K J（3） KIM S（3） KONG B S（3）
LEE D（3） LEE S（3） OH I K（3）
公开年 2013（117）
申请年 2012（68）  2011（38）  2013（11） 
专利权人 KOREA ADVANC.（11） KOREA ADV IN.（8） LG ELECTRONI.（8） UNIV ULSAN F.（8）
UNIV SUNGKYU.（7） SRC CORP（5） SNU R DB FO.（4） UNIV SUNGKYU.（4）
KCC CORP（3） PANASONIC CO.（3） SAMSUNG ELEC.（3） SAMSUNG TECH.（3）
UNIST ACADIN.（3） APPLIED CARB.（2） CENT NAT REC.（2） DAI K C（2）
FISHER T S（2） GYEONG L H（2） HASHIMOTO K（2） INDIAN INST .（2）

Device used for synthesizing graphene, comprises deposition chamber, uncoiler which continuously supplies catalyst substrate, coiler which continuously receives catalyst substrate, and lower shell.

KIM K, KIM K H

Manufacturing graphene, comprises removing hydrogen, nitrogen and oxygen content from graphite granule, crushing with metal components and sulfur, performing heat treatment, mixing gas-doped powder and carrying out ultrasonic treatment.

GYEONG L H

Manufacture of graphene involves preparing expanded graphene, mixing with metal ion hydrate, heating expanded graphite such that metal ion is inserted in interlayer of expanded graphene, and removing inserted metal ion from interlayer.

HUR S H, JEON S, KONG B S, SONG S H

Apparatus, useful for producing graphene that is used in e.g. biosensor, comprises conveying element, laminate, carrier film, transfer element, heating cabinet, target substrate and graphene doping part.

YOON J H, NA D H

Manufacture of graphene quantum dot involves forming carbon source beams by injecting carbon sources into thermal plasma jet, thermally decomposing carbon source, and flowing carbon source beams into tube connected to anode.

SUH J S, KIM J H, KIM J, LEE M W

Manufacture of graphene involves mixing graphite powder and supercritical carbon dioxide, pressurizing, reacting undifferentiated graphite powder with carbon dioxide, and separating carboxylated graphene.

KYUNG S K, SON W K, KIM T I

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Preparing carbon nitride-graphene complex useful as catalyst in oxygen reduction reaction for fuel cell, comprises preparing graphite oxide dispersion solution, and adding cyanamide to dispersion solution and refluxing.

PARK S, OH J H

Manufacturing large amount of pure graphene comprises granulating pulverized e.g. graphite metal component, removing humidity, milling graphite, mixing with solvent, conveying graphite powder for ultrasonic treatment and separating graphene.

GYEONG L H

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J